Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2009-04-21
2010-10-26
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S415000, C257S418000, C257S419000, C257S420000, C257SE29324
Reexamination Certificate
active
07821085
ABSTRACT:
A physical quantity sensor includes: a sensor substrate including a first support substrate, a first insulation film and a first semiconductor layer, which are stacked in this order; a cap substrate including a second support substrate disposed on the first semiconductor layer, and has a P conductive type; and multiple electrodes, which are separated from each other. The first support substrate, the first insulation film and the first semiconductor layer have the P conductive type. The physical quantity is detected based on a capacitance between the plurality of electrodes, and the electrodes are disposed in the first semiconductor layer.
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Fujii Tetsuo
Sugiura Kazuhiko
Suzuki Shigenori
Yokoyama Kenichi
Yokura Hisanori
Denso Corporation
Posz Law Group , PLC
Soward Ida M
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