Photosensitive semiconductor package, method for fabricating...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S434000, C257S676000, C257S680000

Reexamination Certificate

active

10953915

ABSTRACT:
A photosensitive semiconductor package, a method for fabricating the same, and a lead frame thereof are proposed. The lead frame has a die pad and a plurality of leads, wherein at least one recessed portion is formed at an end of each lead close to the die pad, and at least one recessed region is formed on the die pad. An encapsulant fills the recessed portions, the recessed region, and between the leads and the die pad, and is formed on the lead frame to define a chip receiving cavity. A photosensitive chip is mounted in the chip receiving cavity, wherein at least partially a non-active surface of the chip is attached to the encapsulant filling the recessed region and is not in contact with the recessed region. A light-penetrable unit is attached to the encapsulant formed on the lead frame to seal the chip receiving cavity.

REFERENCES:
patent: 6384472 (2002-05-01), Huang
patent: 6545332 (2003-04-01), Huang

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