Photosensitive semiconductor device and a method of manufacturin

Details Photosensitive semiconductor device and a method of manufacturin Photosensitive semiconductor device and a method of manufacturin

1986-05-21

1988-10-25

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430317, 430318, 430330, 437200, G03C 500

Patent

active

047803940

ABSTRACT:
A photosensitive semiconductor device is provided comprising transparent gates, whose side walls are made from silicide and which, apart from these side walls, are formed from polycrystalline silicon.

REFERENCES:
patent: 4189826 (1980-02-01), Smith
patent: 4319395 (1982-03-01), Lund et al.
patent: 4428110 (1984-01-01), Kim
patent: 4597824 (1986-07-01), Shinada et al.
Journal Of Electronic Engineering, vol. 16, No. 149, May 1979, p. 24, Tokyo, Japan; "Sanyo's New Solar Cells Reduce Costs Per Watt".

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