Photosensitive semiconductor contact image sensor

Details Photosensitive semiconductor contact image sensor Photosensitive semiconductor contact image sensor

1988-10-18

1990-09-25

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250211R, 357 30, H01L 2714, H01L 3100

Patent

active

049595334

ABSTRACT:
An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

REFERENCES:
patent: 4446364 (1984-05-01), Hayashi et al.
patent: 4698495 (1987-10-01), Kajiwara
patent: 4855802 (1989-08-01), Kato

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