Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
1999-02-04
2001-05-01
Hamilton, Cynthia (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S005000, C430S296000, C430S311000, C430S324000, C430S325000, C525S536000, C528S382000, C528S364000, C528S373000, C528S376000
Reexamination Certificate
active
06225019
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a photosensitive resin having the performance of high sensitivity and high resolution, a photoresist based on the photosensitive resin, a pattern formed using the resist, a pattern forming method, a device (semiconductor device) or a mask for exposure fabricated by the pattern forming method.
2. Related Background Art
In recent years, microfabrication is advancing in semiconductor elements including integrated circuits, display elements, and so on, or in masks for exposure or the like, so that pattern linewidths tend to be decreased. Exposure light used for the microfabrication is light in the near ultraviolet to ultraviolet region, and the processing is carried out in the wavelength region of these light beams (600 to 300 nm). The decrease of linewidths, however, is now approaching the limit, and for further decrease of linewidth, using light of shorter wavelengths as the exposure light is attempted. The photolithography technology using the ArF excimer laser of the wavelength 193 nm or the KrF excimer laser of the wavelength 248 nm as an exposure light source is under development in recent years.
With this tendency toward the shorter wavelengths of the exposure light, required properties of resists are high transmittance to the exposure light and high resolution. Japanese Patent Application Laid-Open Nos. 5-80515 and 5-265212 disclose resists. Japanese Patent Application Laid-Open No. 5-80515 discloses a resist comprised of a copolymer of 2-substituted 2-norbornene and acrylate. There is, however, some concern over toxicity, because the 2-substituted 2-norbornene disclosed in the application has the cyano group (CN). The reason why the copolymer can undergo alkali development is that its side chains are subject to hydroxylation. Therefore, it has low solubility in alkali solution. Japanese Patent Application Laid-Open No. 5-265212 discloses the resist comprised of a copolymer having the adamantane skeleton in side chains. The copolymer disclosed in this application, however, also has low solubility in alkali solution in alkali development, because it is a high molecular weight compound.
SUMMARY OF THE INVENTION
Therefore, the present invention provides a photosensitive resin comprising a vinyl monomer moiety having an alicyclic group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides a method of producing a semiconductor device, the method comprising the step of coating a substrate with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an alicyclic group in a side chain thereof, and a sulfonyl moiety, and the step of exposing the resist coated on the substrate to form a pattern.
The present invention also provides a method of producing a mask for exposure, the method comprising the step of coating a substrate with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an alicyclic group in a side chain thereof, and a sulfonyl moiety, and the step of exposing the resist coated on the substrate to form a pattern.
The present invention also provides a semiconductor device having a pattern formed with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an alicyclic group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides a mask for exposure having a pattern formed with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an alicyclic group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides a photosensitive resin comprising a vinyl monomer moiety having an adamantyl group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides a resist having dissolved therein a photosensitive resin comprising a vinyl monomer moiety having an adamantyl group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides a method of producing a semiconductor device, the method comprising the step of coating a substrate with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an adamantyl group in a side chain thereof, and a sulfonyl moiety, and the step of exposing the resist coated on the substrate to form a pattern.
The present invention also provides a method of producing a mask for exposure, the method comprising the step of coating a substrate with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an adamantyl group in a side chain thereof, and a sulfonyl moiety, and the step of exposing the resist coated on the substrate to form a pattern.
The present invention also provides a semiconductor device having a pattern formed with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an adamantyl group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides a mask for exposure having a pattern formed with a resist comprising a photosensitive resin, the photosensitive resin comprising a vinyl monomer moiety having an adamantyl group in a side chain thereof, and a sulfonyl moiety.
The present invention also provides an exposure method of exposing a resist by images of patterns of a mask having a plurality of patterns whose images have mutually different contrasts, using the resist comprising the photosensitive resin as set forth above, wherein an image forming position of a pattern with a low contrast out of the images of the patterns of the mask is exposed by an image with a higher contrast than that of the image of the pattern with the low contrast, thereby enhancing contrast of an exposure dose distribution concerning the pattern with the low contrast.
The present invention also provides an exposure method of exposing a resist by an image of a pattern of a mask with radiation, using the resist comprising the photosensitive resin as set forth above, wherein an image with a higher contrast than that of the image of the pattern is formed with radiation having the same wavelength as that of the aforementioned radiation and an image forming position of the pattern of the resist is exposed by the image with the higher contrast, thereby enhancing contrast of an exposure dose distribution concerning the pattern of the resist.
The present invention also provides an exposure method of exposing a resist by an image of a pattern of a mask, using the resist comprising the photosensitive resin as set forth above, wherein an image with a higher contrast than that of the image of the pattern is formed without using the mask and an image forming position of the pattern of the resist is exposed by the image with the higher contrast, thereby enhancing a contrast of an exposure dose distribution concerning the pattern of the resist.
The present invention also provides an exposure method of exposing a resist, using a resist comprising the photosensitive resin as set forth above, wherein double exposures are carried out at the same exposure wavelength by a periodic pattern exposure for carrying out exposure by a periodic pattern formed by interference of two beams or the like, and a normal exposure for carrying out normal exposure using a mask having a pattern of a linewidth not more than a resolving power of an exposure apparatus.
According to the present invention, the photosensitive resin of the present invention can decrease its molecular weight, because the bonds are easily cleaved between the vinyl monomer moiety and the sulfonyl moiety during exposure. The photosensitive resin of the present invention drastically increases its solubility in the alkali solution because of the decrease of molecular weight thereof. The resist prepared using the photosensitive resin of the present invention thus has high sensitivity to the exposure light and can form a highly
Maehara Hiroshi
Matsuda Minoru
Sakai Keita
Ashton Rosemary
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hamilton Cynthia
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