Photosensitive resin composition useful as resist for deep UV li

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430921, 522 15, 522 25, G03F 7004

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active

056911114

ABSTRACT:
The invention provides a photosensitive resin composition useful as a photoresist of chemical amplification type for deep UV lithography such as ArF excimer laser lithography. The resin composition contains, as an acid generator, an alkylsulfonium salt of the general formula (I), wherein R.sup.1 is a C.sub.7 to C.sub.12 alkyl having a bridged alicyclic structure or a C.sub.5 to C.sub.7 monocyclic alkyl, R.sup.2 is an alkyl, R.sup.3 is a C.sub.5 to C.sub.7 .beta.-oxomonocyclic alkyl or a C.sub.7 to C.sub.10 bridged cyclic alkyl having oxo group at the .beta.-position. The general formula (I) is inclusive of novel alkylsulfonium salts in which R.sup.1 is norbornyl group, adamantyl group or cyclohexyl group, R.sup.2 is methyl group and R.sup.3 is .beta.-oxocyclohexyl group or .beta.-oxonorbornane-2-yl group. ##STR1##

REFERENCES:
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T.X. Neenan et al., "Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species", Proceedings of SPIE, vol. 1086, 1989, pp. 2-10.
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Dennis N. Kevill et al., "Essentially Solvent-Independent Rates of Solvolysis . . . tert-Butyl Derivatives and the N.sub.KL Solvent Nucleophilicity Scale", J. Am. Chem. Soc., vol. 108, 1986, pp. 1579-1585.
Takechi et al., "Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification", Journal of Photopolymer Science and Technology, vol. 5, No. 3, 1992, pp. 439-446.
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