Photosensitive reactive ion etch barrier

Details Photosensitive reactive ion etch barrier Photosensitive reactive ion etch barrier

1992-02-25

1993-11-16

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430942, 525480, 525506, 528 29, G03C 1492

Patent

active

052622738

ABSTRACT:
Reaction products of organosilane compounds and a novolac resin having phenolic groups have been found to have a very low rate of etching, thereby enabling the material to also be used as an RIE barrier in semiconductor manufacturing processes. A particular photosensitive material has the following chemical formula: ##STR1##

REFERENCES:
patent: 2182208 (1939-12-01), Nason
patent: 2413582 (1946-12-01), Rust et al.
patent: 2707191 (1955-04-01), Martin et al.
patent: 2920058 (1960-01-01), Brown
patent: 3398122 (1968-08-01), Shepard et al.
patent: 3481901 (1969-12-01), Prochaska
patent: 3911169 (1975-10-01), Lesaicherre et al.
patent: 4045397 (1977-08-01), Parkinson
patent: 4237259 (1980-12-01), Keeley
patent: 4238375 (1980-12-01), Blount
patent: 4451969 (1984-06-01), Chaudhuri
patent: 4565846 (1986-01-01), Saito et al.
patent: 4599243 (1986-07-01), Sachdev et al.
patent: 4631322 (1986-12-01), Isayama et al.
patent: 4692398 (1987-12-01), Durham
patent: 4751170 (1988-06-01), Mimura et al.
patent: 4770974 (1988-09-01), Hiraoka
patent: 4782008 (1988-11-01), Babich et al.
patent: 4806458 (1989-02-01), Durham
M. Toriumi et al., Alkali-Developable Silicon Containing Positive Photoresist(ASTRO) for a Two-Layer Resist System, J. Electrochem Soc., vol. 134, No. 4, Apr. 1987.
Y. Saotome et al., A Silicon Containing Positive Photoresist for a Bilayer Resist System, J. Electrochem. Soc., Apr. 1985.
F. Coopmans et al., DESIRE: A New Route to Submicron Optical Lithography, Solid State Technology, Jun. 1987.
F. Watanabe et al., Oxygen reactive ion etching of organosilicon polymers, J. Vac. Sci. Technol. B 4 (1), Jan./Feb. 1986.
C. W. Wilkins, Jr. et al., An organosilicon novalac resin for multilevel resist applications, J. Vac. Sci. Technol., Jan./Feb. 1985.

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