Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-30
1999-08-24
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257291, 257448, 257461, 257464, H01L 3106, H01L 3100
Patent
active
059427752
ABSTRACT:
A photosensing device is provided which has a photojunction structure that includes a junction of a photodiode and a body-junction of a photo-capacitor operating in an inversion mode. The photojunction structure is fabricated with standard complementary MOS (CMOS) technology features and includes an edge that is guarded against known leakage-causing hazards. In one embodiment, the photodiode junction is surrounded by the body-junction of a poly-gate MOS capacitor to form the photojunction. The photojunction can be placed deeply under a surface of the photosensing device by utilizing a deep diode diffusion to exhibit a better response at the red end of the spectrum. In another embodiment, both shallow and deep junction diodes are combined so that the photojunction has a composite depth which can be used to weight the spectral response to favor one or the other end of the light spectrum. In another embodiment, a portion of a body-junction of a MOS field effect transistor (MOSFET) is incorporated as part of the edge of the photojunction. This particular embodiment extends protection against known leakage hazards to include a switch device which is normally needed to connect the photosensing device to its operating environment.
REFERENCES:
patent: 4155094 (1979-05-01), Ohba
patent: 4238760 (1980-12-01), Carr
patent: 4951105 (1990-08-01), Yamada
patent: 5608243 (1997-03-01), Chi
patent: 5625210 (1997-04-01), Lee
Jackson, Jr. Jerome
Lucent Technologies - Inc.
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