Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1983-09-13
1985-09-10
Kittle, John E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430283, 430287, 430288, 430326, 430330, 430 18, 20415915, 525421, 525426, G03C 170, G03C 516, C08G 6948
Patent
active
045406502
ABSTRACT:
Photoresists suitable for use for forming relief structures of highly heat-resistant polymers and which contain soluble polymeric precursors which carry radiation-reactive radicals bonded through carboxylic ester groups have an increased light-sensitivity when they also contain at least one radiation-reactive, polymerizable allyl compound which has a boiling point above 180.degree., the allyl group thereof being bonded via an oxygen, sulfur and/or nitrogen atom. The highly heat-resistant polymers which can be prepared by means of these photoresists have excellent chemical, electrical and mechanical properties.
REFERENCES:
patent: Re30186 (1980-01-01), Rubner et al.
patent: 3825430 (1974-07-01), Kurka
patent: 3843572 (1974-10-01), Morgan
patent: 3957512 (1976-05-01), Kleeberg et al.
patent: 4045223 (1977-08-01), Rubner et al.
patent: 4088489 (1978-05-01), Rubner et al.
patent: 4291142 (1981-09-01), Tamura et al.
patent: 4310641 (1982-01-01), Ohmura et al.
patent: 4329419 (1982-05-01), Goff et al.
Gessner G. Hawley, Ed., "Polyamide" in The Condensed Chemical Dictionary, 10th Ed., Van Nostrand Reinhold Company Inc., New York, New York, 1981, p. 828.
Hartner Hartmut
Klug Rudolf
Merrem Hans-Joachim
Neisius Karl H.
Hamilton Cynthia
Kittle John E.
Merck Patent Gesellschaft mit beschrankter Haftung
LandOfFree
Photoresists suitable for forming relief structures of highly he does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photoresists suitable for forming relief structures of highly he, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresists suitable for forming relief structures of highly he will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1428504