Photoresists resistant to oxygen plasmas

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430191, 430197, 430177, 430271, 430273, 430280, 430281, 430935, G03F 7004

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active

049685821

ABSTRACT:
The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.

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