Photoresists and methods for optical proximity correction

Details Photoresists and methods for optical proximity correction Photoresists and methods for optical proximity correction

2008-02-21

2011-11-08

Lee, Sin J. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000, C430S325000, C430S326000, C430S328000, C430S329000, C430S330000, C430S905000, C430S907000, C430S910000, C430S914000, C430S270100

Reexamination Certificate

active

08053172

ABSTRACT:
Photolithography compositions and methods. A first layer of a first photoresist is formed on a substrate. A second layer of a second photoresist is formed directly onto the first layer. The second polymer of the second photoresist includes an absorbing moiety. The second layer is patternwise imaged and developed, resulting in removal of base-soluble regions. A relief pattern from the second layer remains. The relief pattern and the first layer are exposed to a second dose of the radiation. The polymer in the relief pattern absorbs a portion of the second dose. A fraction of the second dose passes through the at least one region of the relief pattern and exposes at least one region of the first layer. The relief pattern and base-soluble regions of the first layer are removed. A relief pattern from the first layer remains. A second photolithography method and a photoresist composition are also included.

REFERENCES:
patent: 5290397 (1994-03-01), Ober et al.
patent: 2005/0221224 (2005-10-01), Mizutani

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