Photoresist using dioxaspiro ring-substituted acryl derivatives

Details Photoresist using dioxaspiro ring-substituted acryl derivatives Photoresist using dioxaspiro ring-substituted acryl derivatives

1999-07-30

2000-11-14

Chu, John S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430905, 430909, 430910, G03F 7004

Patent

active

061468118

ABSTRACT:
Disclosed is photoresist using dioxaspiro ring-substitued acryl derivatives, represented by the following chemical formula I or II. As matrix polymers, homopolymers of dioxaspiro ring-substitued acryl monomers or their copolymers with acryl monomers are provided. The deprotection of the dioxaspiro rings from the matrix polymers, usually accomplished by the action of a photoacid generator, causes a great change in the water solubility of the matrix, thereby allowing the matrix to be used for the photoresist required to have high sensitivity, resolution and contrast.

REFERENCES:
patent: 4927737 (1990-05-01), Walls et al.
patent: 5275907 (1994-01-01), Walls
patent: 5691101 (1997-11-01), Ushirogoudhi et al.

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