Photoresist stripping liquid compositions and a method of stripp

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

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430329, 430256, 510176, G03C 500, C11D 904

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active

057957029

ABSTRACT:
The improved photoresist stripping liquid composition comprises (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 2-20 wt % of an amine having an acid dissociation constant (pKa) of 7.5-13 in aqueous solution at 25.degree. C., (d) 35-80 wt % of a water-soluble organic solvent and (e) 2-20 wt % of a corrosion inhibitor and the. method using this composition are capable of not only efficient removal of modified photoresist films that have been formed by dry etching, ashing, ion implantation and other treatments under hostile conditions but also effective prevention of the corrosion that would otherwise occur in substrates irrespective of whether they are overlaid with Al or Al alloy layers or Ti layers.

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patent: 5597678 (1997-01-01), Honda et al.

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