Photoresist removing compositions

Details Photoresist removing compositions Photoresist removing compositions

2005-05-03

2005-05-03

Le, Hoa Van (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Finishing or perfecting composition or product

Reexamination Certificate

active

06887655

ABSTRACT:
A photoresist polymer remover composition for removing photoresist residuals generated from etching or ashing sub-processes. The disclosed photoresist polymer remover composition includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.

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“Digest of Papers 1989 2ndMicroProcess Conference,” Jul. 2-5, 1989 Kobe Japan, Sponsored by The Japan Society of Applied Physics (pp. 196-197).
Search Report dated Aug. 2, 2004 from German Patent and Trademark Office.

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