Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product
Patent
1999-11-08
2000-10-31
Le, Hoa Van
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Finishing or perfecting composition or product
510176, G03F 732
Patent
active
061400270
ABSTRACT:
A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant. Therefore, the photoresist remover composition can easily remove, at a low temperature and in a short time, a photoresist layer which has been cured during hard baking, dry etching, ashing and/or ion-implantation processes, and the potoresist layer cross-linked by a metallic contaminants shed from a lower metal layer during these processes. Also, corrosion of the lower metal pattern during the photoresist removal process can be minimized.
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Baik Ji-Hum
Kim Won-Lae
Lee Sang-Dai
Oh Chang-Il
Yoo Chong-Soon
Dongjin Semichem Co., Ltd.
Le Hoa Van
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