Photoresist pattern, method of fabricating the same, and...

Semiconductor device manufacturing: process – Masking

Reexamination Certificate

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C438S014000

Reexamination Certificate

active

07012031

ABSTRACT:
A photoresist pattern and a method of fabricating the same make it easy to quickly identify a particular portion of a photolithography process that is responsible for causing process defects. The method of fabricating the photoresist pattern includes forming main patterns having a predetermined critical dimension in device-forming regions of a semiconductor substrate, and forming a plurality of test patterns in scribe regions of the substrate. The scribe regions are defined alongside the device-forming regions and separate the device-forming regions from one another. The test patterns have shapes similar to that of the main patterns. Also, one of the test patterns has a critical dimensions similar to that of the main patterns, and other test patterns have respective critical dimensions that are different from the critical dimension of the main patterns.

REFERENCES:
patent: 5468595 (1995-11-01), Livesay
patent: 6485895 (2002-11-01), Choi et al.
patent: 6489085 (2002-12-01), Huang et al.
patent: 6703328 (2004-03-01), Tanaka et al.
patent: 6780781 (2004-08-01), Odaka et al.
patent: 2002/0028405 (2002-03-01), Kim et al.

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