Photoresist development method with reduced cycle time and impro

Details Photoresist development method with reduced cycle time and impro Photoresist development method with reduced cycle time and impro

1999-05-17

2000-12-12

Le, Hoa Van

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

G03F 730

Patent

active

061596620

ABSTRACT:
A method for developing a photoresist pattern on a semiconductor wafer using the puddle method is described, wherein the wafer is subjected to several periods of slow rotation while the puddle is in place on the wafer, The process also embraces an improved wafer-to-wafer uniformity of development. A step by step example of the process is given wherein a TMAH developer is used. Two developer puddle applications are used and each puddle undergoes three 2 second rotation periods at 20 rpm., each followed by a 4 second idle period. The intermittent puddle rotations improve the uniformity of development over the wafer thereby improving the uniformity and accuracy of critical dimensions in the resultant pattern. Although the process induced defect densities remain about the same, the sizes of the defects is reduced. In addition, the improved process reduces the overall development cycle time by about 34 percent.

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Badih El-Kareh, "Fundamentals of Semiconductor Processing Technologies", Kluwer Academic Publiushers, Boston, (1995), pp. 210-211.

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