Photoresist conditioning with hydrogen ramping

Details Photoresist conditioning with hydrogen ramping Photoresist conditioning with hydrogen ramping

2006-05-30

2006-05-30

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S705000, C438S717000, C438S725000, C438S734000, C216S047000, C216S072000

Reexamination Certificate

active

07053003

ABSTRACT:
A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.

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