Photoresist, compounds for composing the photoresist, and method

Details Photoresist, compounds for composing the photoresist, and method Photoresist, compounds for composing the photoresist, and method

1996-12-10

1999-11-30

Chu, John S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430909, 430910, G03F 7004

Patent

active

059940255

ABSTRACT:
There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.6 represents one of (a) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive, (b) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an alkoxy group having a carbon number in the range of 1 to 12 both inclusive, and (c) a hydrocarbon group having a carbon number in the range of 1 to 12 both inclusive and replaced with an acyl group having a carbon number in the range of 1 to 13 both inclusive, x+y+z=1, x is in the range of 0.1 to 0.9, y is in the range of 0.1 to 0.7, and z is in the range of 0 to 0.7. The resin has a weight percent in the range of 75 to 99.8 both inclusive, and the photo acid generator has a weight percent in the range of 0.2 to 25 both inclusive. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist has high resolution to thereby make it possible to form a fine pattern without resist residue.

REFERENCES:
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5332650 (1994-07-01), Murata et al.
patent: 5399647 (1995-03-01), Nozaki
patent: 5587274 (1996-12-01), Kishida et al.
patent: 5635332 (1997-06-01), Nakano et al.
patent: 5665518 (1997-09-01), Maeda et al.
patent: 5688628 (1997-11-01), Oie et al.
patent: 5738975 (1998-04-01), Nakano et al.
Resist Materials for Short Wavelenght, 1988, pp. 16-21.
H. Ito et al.; "Applications of Photoinitiators to the Design of Resists for Semiconductor Manufacturing"; Polymers in Microelectronics, American Chemical Society Symposium Series, 1984, vol. 242, pp. 11-23.
S. Takechi et al.; "Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification"; Journal of Photopolymer Science and Technology, vol. 5, No. 3, 1992, pp. 439-446.
K. Nakano et al.; "Positive Chemically Amplified Resist for ArF Excimer Laser Lithography . . . Terpolymer"; SPIE, vol. 2438, 1995, pp. 433-444.
R.D. Allen et al.; "Single Layer Resists with Enhanced Etch Resistance for 193 nm Lithography"; Journal of Photopolymer Science and Technology, vol. 7, No. 3, 1994, pp. 507-516.
T. Sakamizu et al.; "Acid-Catalyzed Reactions of Tetrahydropyranyl-Protected Polyvinylphenol in a Novolak-Resin-Based Positive Resist"; Jpn. J. Appl. Phys., vol. 31 (1992) pp. 4288-4293.
S.A. MacDonald et al.; "Airborne Chemical Contamination of a Chemically Amplified Resist"; SPIE, vol. 1466 (1991), pp. 2-12.
J.V. Crivello et al.; "A New Preparation of Triarylsulfonium and -selenonium Salts via the . . . Salts"; Journal of Organic Chemistry, vol. 43, No. 15, 1978, pp. 3055-3058.
T.X. Neenan et al.; "Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species"; SPIE, vol. 1086 (1989), pp. 2-10.
T. Ueno et al.; "Chemical Amplification Positive Resist Systems Using Novel Sulfonates as Acid Generators"; Proceedings of PME'89, 1990, pp. 413-424.
G.N. Taylor et al.; "Positive, Chemically Amplified Aromatic Methacrylate Resist . . . Group"; Chem. Mater. 1991, vol. 3, pp. 1031-1040.

Affiliated with

Also associated with

Rating

Photoresist, compounds for composing the photoresist, and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist, compounds for composing the photoresist, and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist, compounds for composing the photoresist, and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1669637