Photoresist composition for forming an insulation film,...

Details Photoresist composition for forming an insulation film,... Photoresist composition for forming an insulation film,...

2006-03-07

2006-03-07

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S781000, C430S192000, C430S319000, C430S330000

Reexamination Certificate

active

07008883

ABSTRACT:
A photoresist composition comprising (A) a resin soluble in an alkali, (B) an ester of a quinonediazidesulfonic acid, (C) a thermosetting component and an organic solvent; an insulation film for organic EL devices which is formed by heating a resist film formed with the composition on a substrate in accordance with photolithography, has a sectional shape having upper edge portions having a round shape and the width increasing towards the bottom portion and has a thickness is in the range of 0.3 to 3 μm; and a process for producing the insulation film using the photoresist composition. The photoresist composition, the insulation film for organic EL devices and the process for producing the insulation film provide an insulation film having a sectional shape advantageous for an insulation film for organic EL devices since the width in the sectional shape of the film increases towards the bottom portion.

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European Search Report dated May 12, 2004.

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