Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1996-12-13
1999-10-05
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430326, 430330, 430910, 522 31, G03F 7004
Patent
active
059621842
ABSTRACT:
The present invention relates to an improved chemically amplified photoresist composition comprising (i) a photosensitive acid generator and (ii) a polymer comprising the reaction product of hydroxystyrene with a monomer selected from acrylate or methacrylate having an alicyclic ester substituent.
REFERENCES:
patent: 5045431 (1991-09-01), Allen et al.
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5225316 (1993-07-01), Vogel et al.
patent: 5262281 (1993-11-01), Bauer et al.
patent: 5275908 (1994-01-01), Elsaesser et al.
patent: 5324804 (1994-06-01), Steinmann
patent: 5399647 (1995-03-01), Nozaki
patent: 5419998 (1995-05-01), Mayes et al.
patent: 5443690 (1995-08-01), Takechi et al.
patent: 5492793 (1996-02-01), Breyta et al.
patent: 5496678 (1996-03-01), Imai et al.
patent: 5506088 (1996-04-01), Nozaki et al.
patent: 5547812 (1996-08-01), Collins et al.
patent: 5635332 (1997-06-01), Nakano et al.
patent: 5660969 (1997-08-01), Kaimoto
C. Mertesdorf et al., "Structure/Property Relationship of Acetal and Ketal Blocked Polyvinyl Phenols as Polymeric Binder in 2-Component Positive Deep-UV Photoresist", M. Althuis (Ed), Polymers for Microelectronics ACS Anaheim Meeting 95.
E. Reichmanis et al., "Chemical Amplication Mechanisms for Microlithography", Chem. Mater. 1991, 3, 394-407.
H. Kikuchi et al., "Positive Chemical Amplication Resist for Deep UV Lithography", Journal of Photopolymer Science and Technology, Vol. 4, No. 3 (1991), 357-360.
K. Nozaki et al., A Novel Polymer for a 193-nm Resist, Journal of Photopolymer Science and Technology, vol. 9, No. 3 (1996) 509-522.
R. D. Allen et al., "Progress in 193 nm Positive Resists", Journal of Photopolymer Science and Technology, vol. 9, No. 3 (1996) 465-474.
K. Nakano et al., "Positive Chemically Amplified Resist for ArF Excimer Laser Lithography Composed of a Novel Transparent Photoacid Generator and an Alicyclic Terpolymer", SPIE vol. 2438, (1995), pp. 433-443.
M. Takahashi et al., "Evaluation of Chemically Amplified Resist Based on Adamantyl Methacrylate for 193 nm Lithography", SPIE vol. 2438, (1995) pp. 422-432.
Allen Robert David
Sooriyakumaran Ratnam
Chu John S.
International Business Machines - Corporation
Martin Robert B.
Reed Dianne E.
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