Photoresist composition and method of manufacturing a...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S034000, C438S586000, C438S780000, C438S948000, C257SE21002, C257SE21259, C257SE21492, C257SE31104

Reexamination Certificate

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07981706

ABSTRACT:
A photoresist composition includes an alkali-soluble resin, a dissolution inhibitor including a quinone diazide compound, a first additive including a benzenol compound represented by the following Chemical Formula 1, a second additive including an acrylic copolymer represented by the following Chemical Formula 2 and an organic solvent. Accordingly, heat resistance of a photoresist pattern may be improved, and the photoresist pattern may be readily stripped. As a result, crack formation in the photoresist pattern may be reduced and/or prevented.

REFERENCES:
patent: 6045977 (2000-04-01), Chandross et al.
patent: 2008/0254634 (2008-10-01), Park et al.
patent: 2010/0009482 (2010-01-01), Park et al.

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