Photoresist composition and method of forming pattern using...

Details Photoresist composition and method of forming pattern using... Photoresist composition and method of forming pattern using...

2005-05-17

2005-05-17

Chu, John S. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

C430S165000, C430S192000, C430S193000, C430S326000

Reexamination Certificate

active

06893791

ABSTRACT:
Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.

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patent: 6365306 (2002-04-01), Nunomura et al.
patent: 6514658 (2003-02-01), Nunomura et al.

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