Photoresist composition and method of forming a pattern...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S323000, C430S326000, C430S914000, C430S921000

Reexamination Certificate

active

11141736

ABSTRACT:
A photoresist composition for preventing exposing failures and a method of forming a pattern using the same are disclosed. The photoresist composition preferably comprises about 0.1% to about 0.5% by weight of a photo acid generator, and about 2% to about 10% by weight of a polymer resin, the PAG including a monophenyl sulfonium compound, a triphenyl sulfonium compound or a mixture thereof. The footing phenomenon and the top loss of a pattern are sufficiently prevented.

REFERENCES:
patent: 5968713 (1999-10-01), Nozaki et al.
patent: 6200728 (2001-03-01), Cameron et al.
patent: 6277538 (2001-08-01), Choi et al.
patent: 6447980 (2002-09-01), Rahman et al.
patent: 6541179 (2003-04-01), Hatakeyama et al.
patent: 6991888 (2006-01-01), Padmanaban et al.
patent: 2004/0009430 (2004-01-01), Kanna et al.
patent: 2005/0277056 (2005-12-01), Kim et al.
patent: 5-323599 (1993-12-01), None
patent: 9-73173 (1997-03-01), None
patent: 9-90637 (1997-04-01), None
patent: 10-161313 (1998-06-01), None
patent: 11-202479 (1999-07-01), None
patent: 2002-207289 (2002-07-01), None
patent: 2003-0002365 (2003-01-01), None
patent: 2003-0079908 (2003-10-01), None
English language abstract of the Japanese Publication No. 5-323599, Dec. 1993.
English language abstract of the Japanese Publication No. 9-73173, Mar. 1997.
English language abstract of the Japanese Publication No. 9-90637, Apr. 1997.
English language abstract of the Japanese Publication No. 10-161313, Jun. 1998.
English language abstract of the Japanese Publication No. 11-202479, Jul. 1999.
English language abstract of the Japanese Publication No. 2002-207289, Jul. 2002.
English language abstract of the Korean Publication No. 2003-0002365, Jan. 2003.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photoresist composition and method of forming a pattern... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist composition and method of forming a pattern..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist composition and method of forming a pattern... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3902678

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.