Photoresist composition

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S907000, C522S154000, C522S156000, C526S245000

Reexamination Certificate

active

07014980

ABSTRACT:
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formulawhere R1represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

REFERENCES:
patent: 3438946 (1969-04-01), Lichstein et al.
patent: 4296224 (1981-10-01), Fukui et al.
patent: 4684705 (1987-08-01), Yamamoto et al.
patent: 5021501 (1991-06-01), Ohmori et al.
patent: 5081165 (1992-01-01), Inukai et al.
patent: 6027856 (2000-02-01), Nozaki et al.
patent: 6074801 (2000-06-01), Iwasa et al.
patent: 6106998 (2000-08-01), Maeda et al.
patent: 6140010 (2000-10-01), Iwasa et al.
patent: 6146806 (2000-11-01), Maeda et al.
patent: 6265135 (2001-07-01), Kodama et al.
patent: 6319650 (2001-11-01), Gelorme et al.
patent: 6503686 (2003-01-01), Fryd et al.
patent: 6511787 (2003-01-01), Harada et al.
patent: 6548219 (2003-04-01), Ito et al.
patent: 6610456 (2003-08-01), Allen et al.
patent: 6784312 (2004-08-01), Miyazawa et al.
patent: 6806026 (2004-10-01), Allen et al.
patent: 2002/0061464 (2002-05-01), Aoai et al.
patent: 2002/0155376 (2002-10-01), Hashimoto et al.
patent: 2356258 (2001-05-01), None
patent: WO 00/67072 (2000-09-01), None
Y.C. Bae et al., “Rejuvenation of 248 nm Resist Backbones for 157 nm Lithography,” Journal of Photopolymer Science and Technology, vol. 14, No. 4, pp. 613-620, 2001.
T.H. Fedynyshyn et al., “High Resolution Fluorocarbon Based Resist for 157-nm Lithography,” Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, Editor, Proceedings of SPIE, vol. 4345, pp. 296-307, 2001.
H. Ito et al., “Polymer Design for 157 nm Chemically Amplified Resists,” Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, Editor, Proceedings of SPIE, vol. 4345, pp. 273-284, 2001.
R.R. Kunz et al., “Experimental VUV Absorbance Study of Fluorine-Functionalized Polystyrenes,” Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, Editor, Proceedings of SPIE, vol. 4345, pp. 285-295, 2001.
Yasunori, K. et al., “Chemical Amplification Resist Composition,” Patent Abstracts of Japan, Publication No. 2002-006501 (Jan. 9, 2002).
Masaaki, I. et al., “Radiation Sensitive Resin Composition,” Patent Abstracts of Japan, Publication No. 06-019137 (Jan. 28, 1994).
Koji, N. et al., “Negative Type Resist Composition, Resist Pattern Forming Method and Method for Producing Electronic Device, ” Patents Abstracts of Japan, Publication No. 2001-154357 (Jun. 8, 2001).
Tomoya, S. et al., “Photosensitive Resin Composition,” Patent Abstracts of Japan, Publication No. 2004-004576 (Jan. 8, 2004).
Kunihiko, K., “Stimulation-Sensitive Composition and Compound,” Patent Abstracts of Japan, Publication No. 2004-139014 (May 13, 2004).
Kunihiko, K., “Stimulation-Sensitive Composition and Compound,” Patent Abstracts of Japan, Publication No. 2003-140331 (May 14, 2003).
Shunichi, K. et al., “Negative Type Flourine-Containing Resist Composition,” Patent Abstracts of Japan, Publication No. 2002-090996 (Mar. 27, 2002).
Koji, N. et al., “Negative-Type Resist Composition, Resist Pattern Forming Method and Method for Manufacturing Semiconductor Device,” Patent Abstracts of Japan, Publication No. 2001-343748 (Dec. 14, 2001).
Kunihiko, K., “Resist Composition,” Patent Abstracts of Japan, Publication No. 2003-307839 (Oct. 31, 2003).
Kunihiko, K., “Resist Composition,” Patent Abstracts of Japan, Publication No. 2003-02754 (Oct. 24, 2003).

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