Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1996-01-19
1997-09-09
Hamilton, Cynthia
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
526282, 525312, 5253295, 549420, 560220, G03F 7039, C07C 6954, C07D30912, C07D30720
Patent
active
056655185
ABSTRACT:
The present invention provides a vinylmonomer represented with the following general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a dihydric, bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 represents a group to be decomposed by acid or a hydrogen atom, X represents an alkylene group or a coupling group composed of an oxygen-carbon bond, and Y represents an alkylene group or a coupling group composed of a carbon-carbon bond. A photoresist obtained by polymerizing a monomer in accordance with the invention has a high transparency to FUV having a wavelength of at greatest 220 nm, high sensitivity and resolution to FUV, and a high dry etching resistance, and hence is suitable for exposure light such as FUV having a wavelength of at greatest 220 nm and, in particular, ArF excimer laser. The photoresist makes it possible to carry out fine patterning required for the fabrication of a semiconductor element.
REFERENCES:
patent: 4332964 (1982-06-01), Bellmann et al.
patent: 4835027 (1989-05-01), Sudo et al.
patent: 4948700 (1990-08-01), Maeda et al.
patent: 5230984 (1993-07-01), Tachiki et al.
patent: 5314785 (1994-05-01), Vogel et al.
"Applications of Photoinitiators to the Design of Resists for Semiconductor Manufacturing," H. Ito et al., American Chemical Society Symposium, vol. 242, pp. 11-23, 1984.
"ArF Excimer Laser Lithography (3)," M. Sasago et al., 36th Applied Physics Institution Conference Manuscripts, 1p-K-4, p. 562, 1989 (Japanese-no translation).
"Lithographic Characteristics of Alicyclic Polymer Based ArF Single Layer Resists," M. Takahashi et al., Journal of Photopolymer Science and Technology, vol. 7, No. 1, pp. 31-39, 1984.
"Resolution and Etch Resistance of a Family of 193 nm Positive Resists," R. D. Allen et al., Journal of Photopolymer Science and Technology, vol. 8, No. 4, pp. 623-636, 1995.
"Challenges in Excimer Laser Lithography for 256M DRAM and Beyond," M. Endo et al., IEDM Tech. Digest, pp. 45-48, 1992.
"Single-Layer Chemically Amplified Photoresists for 193-nm Lithography," G. M. Wallraff et al., J. Vac. Sci. Technol. B 11(6), pp. 2783-2788, Nov./Dec. 1993.
"Single Layer Resists with Enhanced Etch Resistance for 193 nm Lithography," R. D. Allen et al., Journal of Photopolymer Science and Technology, vol. 7, No. 3, pp. 507-516, 1994.
"Highly Transparent Chemically Amplified ArF Excimer Laser Resists by Absorption Band Shift for 193 nm Wavelength," T. Naito et al., Jpn. J. Appl. Phys., vol. 33, pp. 7028-7032, Dec. 1994.
"Alicyclic Polymer for ArF and KrF Excimer Resist Based on Chemical Amplification," S. Takechi et al., Journal of Photopolymer Science and Technology, vol. 5, No. 3, pp. 439-445, 1992.
"A New Prepartaion of Triarylsulfonium and -selenomium Salts via the Copper(II)-Catalyzed Arylation of Sulfides and Selenides with Diaryliodonium Salts," J. V. Crivello et al., J. Org. Chem., vol. 43, No. 15, pp. 3055-3058, 1978.
"Development of a Chemically Amplified Positive (CAMP) Resist Material for Single Layer Deep-UV Lithography," O. Nalamasu et al., SPIE, vol. 1262, pp. 32-48, 1990.
"Chemical Amplication Positive Resist Systems Using Novel Sulfonates as Acid Generators," T. Ueno et al., Proceedings of PME '89, pp. 413-424, 1990.
Hasegawa Etsuo
Maeda Katsumi
Nakano Kaichiro
Ohfuji Takeshi
Hamilton Cynthia
NEC Corporation
LandOfFree
Photoresist and monomer and polymer for composing the photoresis does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photoresist and monomer and polymer for composing the photoresis, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist and monomer and polymer for composing the photoresis will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-68566