Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1995-12-20
1998-01-20
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 10, 257184, 257185, 313366, 313367, 313542, 313346R, H01L 2906, H01L 2912
Patent
active
057104352
ABSTRACT:
A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
REFERENCES:
patent: 3958143 (1976-05-01), Bell
patent: 5047199 (1991-09-01), Costello et al.
patent: 5336902 (1994-08-01), Nigaki et al.
patent: 5404026 (1995-04-01), Marsella, Jr. et al.
patent: 5591986 (1997-01-01), Niigaki et al.
Hirohata Toru
Niigaki Minoru
Suzuki Tomoko
Yamada Masami
Hamamatsu Photonics K.K.
Ngo Ngan V.
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