Photomasks for photolithographic fine patterning

Details Photomasks for photolithographic fine patterning Photomasks for photolithographic fine patterning

1986-05-16

1988-04-05

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, 430321, 430322, 430327, G03C 500

Patent

active

047358904

ABSTRACT:
A photomask, used for the photolithographic fine patterning of a photoresist film in the preparation of semiconductors, is provided with a thin film of a polymeric material having resilient elasticity to cover the patterned masking layer and the surface of the substrate plate altogether so that very intimate contact is obtained between the photomask and the photoresist film contributing to a great increase in the resolving power in addition to the advantages of decreased stain and scratch formation on the surface of the photomask resulting in an increased productivity of semiconductor devices.

REFERENCES:
patent: 4357417 (1982-11-01), Bartko et al.
patent: 4396641 (1983-08-01), Imada et al.
patent: 4424089 (1984-01-01), Sullivan
patent: 4436809 (1984-03-01), Akao et al.
patent: 4514489 (1985-04-01), Garcia et al.
Carter et al, "Protective Coatings for Masks", IBM TDB vol. 13, (10) Mar. 1971, p. 3193.

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