Photomask with overlay mark and method of fabricating...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S022000

Reexamination Certificate

active

07732105

ABSTRACT:
Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.

REFERENCES:
patent: 6034375 (2000-03-01), Nozue
patent: 6063529 (2000-05-01), Hwang
patent: 6636312 (2003-10-01), Hsin et al.
patent: 10-289842 (1998-10-01), None
patent: 2000-235947 (2000-08-01), None
patent: 2003-234272 (2003-08-01), None
patent: 2005-317617 (2005-11-01), None
patent: 1997-0049098 (1997-07-01), None
patent: 1998-0081264 (1998-11-01), None
patent: 2001-0005118 (2001-01-01), None
English language abstract of Japanese Publication No. 10-289842.
English language abstract of Korean Publication No. 1998-0081264.
English language abstract of Korean Publication No. 2001-0005118.
English language abstract of Japanese Publication No. 2005-317617.

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