Photomask pattern

Details Photomask pattern Photomask pattern

2006-03-07

2006-03-07

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000

Reexamination Certificate

active

07008732

ABSTRACT:
A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

REFERENCES:
patent: 6800402 (2004-10-01), Fujimoto

Affiliated with

Also associated with

Rating

Photomask pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask pattern will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3561826