Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle
Reexamination Certificate
2011-03-08
2011-03-08
Whitmore, Stacy A (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
C716S055000, C430S005000
Reexamination Certificate
active
07904851
ABSTRACT:
This invention discloses a photomask manufacturing method. A pattern dimensional map is generated by preparing a photomask in which a mask pattern is formed on a transparent substrate, and measuring a mask in-plane distribution of the pattern dimensions. A transmittance correction coefficient map is generated by dividing a pattern formation region into a plurality of subregions, and determining a transmittance correction coefficient for each of the plurality of subregions. The transmittance correction value of each subregion is calculated on the basis of the pattern dimensional map and the transmittance correction coefficient map. The transmittance of the transparent substrate corresponding to each subregion is changed on the basis of the transmittance correction value.
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Fukuhara Kazuya
Hirano Takashi
Itoh Masamitsu
Dimyan Magid Y
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Whitmore Stacy A
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