Photomask including ion trapping layer and method of...

Details Photomask including ion trapping layer and method of... Photomask including ion trapping layer and method of...

2011-08-02

2011-08-02

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07989123

ABSTRACT:
A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.

REFERENCES:
patent: 5527731 (1996-06-01), Yamamoto et al.
patent: 7073969 (2006-07-01), Kamm
patent: 2003/0138656 (2003-07-01), Sparks
patent: 2005/0233408 (2005-10-01), Pouwels et al.
patent: 10-2008-0001023 (2008-01-01), None
patent: 10-2008-0019996 (2008-03-01), None

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