Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-05-23
2006-05-23
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07049034
ABSTRACT:
The present invention generally relates, to optical lithography and more particularly relates to the fabrication of transparent or semitransparent phase shifting masks used in the manufacture of semiconductor devices. In particular, the present invention utilizes an internal etch stop layer and either a deposited substantially transparent layer, deposited partially transparent layer or deposited opaque thereon in an otherwise conventional photomask. The photomask of the present invention is used to make semiconductor devices or integrated circuits. In a preferred embodiment of the present invention is directed to an aaPSM comprising: a patterned opaque layer with a first set of at least one light transmitting openings and a second set of at least one light transmitting openings; a deposited substantially transparent layer underlying the opaque layer wherein the deposited substantially transparent layer has corresponding light transmitting openings to each of the openings of the first set of at least one light transmitting openings, a substantially transparent etch stop layer underlying the deposited substantially transparent layer, and a substantially transparent substrate underlying the transparent etch stop layer. In a preferred embodiment, the internal substantially transparent etch stop layer of the present invention is comprised of MgFxand even more particularly may be comprised of MgF2deposited under evaporation. Other materials that may be used for the substantially transparent etch stop layer of the present invention include but are not limited to Al2O3and AlxNy.
REFERENCES:
patent: 4178403 (1979-12-01), Sakurai et al.
patent: 4556608 (1985-12-01), Kaneki et al.
patent: 4720442 (1988-01-01), Shinkai et al.
patent: 5439763 (1995-08-01), Shimase et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5460908 (1995-10-01), Reinberg
patent: 5472811 (1995-12-01), Vasudev et al.
patent: 5477058 (1995-12-01), Sato
patent: 5482799 (1996-01-01), Isao et al.
patent: 5547787 (1996-08-01), Ito et al.
patent: 5578402 (1996-11-01), Watanabe
patent: 5693568 (1997-12-01), Liu et al.
patent: 5725973 (1998-03-01), Han et al.
patent: 5756396 (1998-05-01), Lee et al.
patent: 5876877 (1999-03-01), Hanyu et al.
patent: 5935733 (1999-08-01), Scott et al.
patent: 5935740 (1999-08-01), Pierrat
patent: 5939227 (1999-08-01), Smith
patent: 5955222 (1999-09-01), Hibbs et al.
patent: 5981110 (1999-11-01), George et al.
patent: 6120942 (2000-09-01), Reinberg
patent: 6174771 (2001-01-01), Leu
patent: 6187480 (2001-02-01), Huang
patent: 6190836 (2001-02-01), Grenon et al.
patent: 6221542 (2001-04-01), Reinberg
patent: 6261963 (2001-07-01), Zhao et al.
patent: 6335130 (2002-01-01), Chen et al.
patent: 6355557 (2002-03-01), Stinnett et al.
patent: 6368967 (2002-04-01), Besser
patent: 6429033 (2002-08-01), Gee et al.
patent: 6515343 (2003-02-01), Shroff et al.
patent: 6544696 (2003-04-01), Westerman et al.
patent: 6562522 (2003-05-01), Yan
patent: 6582856 (2003-06-01), Quek et al.
patent: 6610594 (2003-08-01), Apelgren et al.
patent: 6699625 (2004-03-01), Lee et al.
patent: 6703252 (2004-03-01), Chen et al.
patent: 6730445 (2004-05-01), Angelopoulos et al.
patent: 6743553 (2004-06-01), Shiota et al.
patent: 6780548 (2004-08-01), Kalk
patent: 2001/0035547 (2001-11-01), Isogai
patent: 2001/0044056 (2001-11-01), Kokubo
patent: 2001/0051420 (2001-12-01), Besser et al.
patent: 2002/0111030 (2002-08-01), Batra et al.
patent: 2002/0123217 (2002-09-01), Subramanian et al.
patent: 2002/0142585 (2002-10-01), Mandal
patent: 2002/0160520 (2002-10-01), Orloff et al.
patent: 2002/0173162 (2002-11-01), Liu et al.
patent: 2002/0192944 (2002-12-01), Sonderman et al.
patent: 2003/0118920 (2003-06-01), Johnstone et al.
patent: 2003/0211728 (2003-11-01), Mandal
patent: 2003/0228047 (2003-12-01), Chou et al.
patent: 2003/0228529 (2003-12-01), Dieu et al.
patent: 2004/0058139 (2004-03-01), Dubin et al.
patent: 2004/0094760 (2004-05-01), Taylor et al.
patent: 2004/0126057 (2004-07-01), Yoo
patent: 2004/0137335 (2004-07-01), Cummings
patent: 2-39153 (1990-02-01), None
patent: 7-104457 (1995-04-01), None
patent: 8-76353 (1996-03-01), None
patent: 2001-174973 (2001-06-01), None
Matthew Lassiter, et al., “157nm Binary and Embedded Attenuated PSM Films”, 157 nm Symposium, Yokohama (2003).
Matthew Lassiter, et al., “Improved Phase Uniformity Control Using a New AAPSM Etch Stop Layer Technique”, SPIE vol. 5256, 23rd Annual BACUS Symposium on Photomask Technology (2003).
Michael Cangemi, et al., “Implementation of a Transparent Etch Stop Layer for an Improved Alternating PSM”, VDE vol. 43, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents 2004.
Canon Presentation, “Canon's IDEAL: Innovative Double Exposure by Advanced Lithography,” BACUS News, SPIE, Apr. 2001, vol. 17, Issue 4, p. 1-7.
T. Ebihara, T. Oga, P.D. Rhyins, M. Sweis, P.M. Martin, “150-nm dense/isolated contact hole study with Canon IDEAL technique”, SPIE Proceeding 4562-119.
R.L. Kosetelak, C. Pierrat, J.G. Garofalo, and S. Vaidya, “Exposure characteristics of alternate aperture phase-shifting masks fabricated using a subtractive process”, J. Vac. Sci. Tech. B0, 3055-3061 (1992).
M.D. Levenson, N.S. Viswanathan, and R.A. Simpson, “Improving Resolution with a Phase-Shifting Mask”, IEEE Trans. Elect. Dev. ED-29, 1828-1836 (1982.)
K.D. Lucas, C.M. Yuan, and A.J. Stroljwas, “A rigorous and practical vector model for phase shigting masks in optical lithography”, Proc. SPIE 1674, 252-263 (1992).
Armin Semmler, L. Mader, A. Elsner, R. Koehle, O. Griesinger, C. Noelscher “Application of 3D EMF Simulation for Development and Optimization of Alternating Phase Shifting Masks”, Optical Microlithography XIV, Proceedings of SPIE, 2001, p. 356-367, vol. 4346 (Christopher J. Progler, ed.).
Song Peng, “Through-Focus Image Balancing of Alternating Phase Shifting Maskes”, SPIE vol. 3873, p. 328-336 (1999).
T. Terasawa, N. Hasegawa, A. IMAI and S. Okazaki, “Analysis of Nonplanar Topography Effects of Phase Shift Masks on Imaging Characteristics”, Japanese J. Appl. Phys. 34, 6578-6583 (1995).
T. Teresawa, N, Hasegawa, T. Tanaka, S. Katagiri, and T. Kurosaki, “Improved Resolution of an i-line stepper using a phase-shift mask”, J. Vac. Sci. Tech. B8, 1300-1308, (1990).
Cangemi Michael
Lassiter Matthew
Martin Patrick M.
Poortinga Eric
Taylor Darren
Amster Rothstein & Ebenstein LLP
Photronics, Inc.
Rosasco S.
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