Photomask having a transparency-adjusting layer, method of...

Details Photomask having a transparency-adjusting layer, method of... Photomask having a transparency-adjusting layer, method of...

2006-02-21

2006-02-21

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07001697

ABSTRACT:
A photomask for use in photolithography has substrate, a main pattern at one side of the substrate, and a transparency-adjusting layer at the other side of the substrate. The transparency-adjusting layer has a characteristic that allows it to change the intensity of the illumination incident on the main pattern during the exposure process accordingly. In manufacturing the photomask, a first exposure process is carried out on a wafer using just the substrate and main pattern. The critical dimensions of elements of the pattern formed on the wafer as a result of the first exposure process are measured. Differences between these critical dimensions and a reference critical dimension are then used in designing a layout of the transparency-adjusting layer in which the characteristic of the layer is varied to compensate for such differences.

REFERENCES:
patent: 5387484 (1995-02-01), Doany et al.
patent: 5624773 (1997-04-01), Pforr et al.
patent: 10-161297 (1998-06-01), None
patent: 1999-0065144 (1999-08-01), None

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