Photomask defect repair method

Details Photomask defect repair method Photomask defect repair method

1999-06-15

2000-10-31

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

20419234, G03F 900

Patent

active

061399930

ABSTRACT:
A method of repairing a defect in a photomask minimizes the step difference between a defect-free portion and a repaired portion of the mask's substrate. The method comprises a two-step etch process: irradiating only the body of the defect on the substrate with a first dose of an ion beam to remove a part of the body, then simultaneously irradiating the entire light transmitting surface of the substrate including the body of the defect with a second dose of an ion beam until the body of the defect is completely removed from the substrate. The sum of the first dose and the second dose of the ion beam irradiation is equal to the single dose of irradiation with the ion beam that is necessary to remove the body of the defect from the substrate in a single irradiation therewith. The method further includes cleaning away any ion stain on the substrate after the two-step etch process.

REFERENCES:
patent: 5272116 (1993-12-01), Hosono
patent: 6030730 (2000-02-01), Smolinski

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