Photomask apparatus, photomask manufacturing method, and...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S005000, C430S311000

Reexamination Certificate

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07632627

ABSTRACT:
A light non-transmitive layer and resist are coated on a surface of a mask. By carrying out exposing, developing, and etching, a positive
egative reversed pattern is formed on the surface of the mask. A light non-transmitive layer and a resist are coated on a portion of the workpiece where the pattern is to be formed. Exposure is carried out by using the mask that can be changed by a connector. The pattern of the mask is transferred to the resist, and the resist is developed. After the resist is developed, a mask pattern is formed on a surface of the workpiece by etching.

REFERENCES:
patent: 5596386 (1997-01-01), Hankawa
patent: 5965329 (1999-10-01), Sakaki et al.
patent: 6019784 (2000-02-01), Hines
patent: 6576406 (2003-06-01), Jacobsen et al.
patent: 56-41639 (1981-04-01), None
patent: 63-144888 (1988-06-01), None
patent: 5-191015 (1993-07-01), None

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