Photomask and pattern formation method using the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S022000, C430S311000

Reexamination Certificate

active

07998641

ABSTRACT:
A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.

REFERENCES:
patent: 5723236 (1998-03-01), Inoue et al.
patent: 5725969 (1998-03-01), Lee
patent: 5888674 (1999-03-01), Yang et al.
patent: 6207333 (2001-03-01), Adair et al.
patent: 6255023 (2001-07-01), Huang et al.
patent: 6413684 (2002-07-01), Stanton
patent: 6703168 (2004-03-01), Misaka
patent: 7060395 (2006-06-01), Misaka
patent: 7060398 (2006-06-01), Misaka
patent: 7147975 (2006-12-01), Misaka
patent: 2002/0197544 (2002-12-01), Iwasaki
patent: 2005/0069788 (2005-03-01), Tanaka et al.
patent: 2005/0277034 (2005-12-01), Mitsui
patent: 2006/0093963 (2006-05-01), Terahara
patent: 2006/0121364 (2006-06-01), Omura
patent: 2007/0003879 (2007-01-01), Chang et al.
patent: 2009/0061328 (2009-03-01), Nonami et al.
patent: 2009/0061330 (2009-03-01), Irie et al.
patent: 9-281690 (1997-10-01), None
patent: 2001-296647 (2001-10-01), None
patent: 2003-322949 (2003-11-01), None
United States Office Action, issued in U.S. Appl. No. 12/181,650, mailed Jun. 9, 2010.
United States Office Action, issued in U.S. Appl. No. 12/204,252, mailed Jun. 23, 2010.
United States Notice of Allowance issued in U.S. Appl. No. 12/204,252, mailed Nov. 17, 2010.
United States Office Action issued in U.S. Appl. No. 12/181,650, mailed Nov. 3, 2010.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photomask and pattern formation method using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask and pattern formation method using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask and pattern formation method using the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2751770

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.