Photomask and pattern formation method using the same

Details Photomask and pattern formation method using the same Photomask and pattern formation method using the same

2011-08-30

2011-08-30

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S311000

Reexamination Certificate

active

08007959

ABSTRACT:
A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening.

REFERENCES:
patent: 5723236 (1998-03-01), Inoue et al.
patent: 5725969 (1998-03-01), Lee
patent: 5888674 (1999-03-01), Yang et al.
patent: 6207333 (2001-03-01), Adair et al.
patent: 6255023 (2001-07-01), Huang et al.
patent: 6413684 (2002-07-01), Stanton
patent: 6703168 (2004-03-01), Misaka
patent: 7060395 (2006-06-01), Misaka
patent: 7060398 (2006-06-01), Misaka
patent: 7147975 (2006-12-01), Misaka
patent: 2002/0197544 (2002-12-01), Iwasaki
patent: 2005/0069788 (2005-03-01), Tanaka et al.
patent: 2005/0277034 (2005-12-01), Mitsui
patent: 2006/0093963 (2006-05-01), Terahara
patent: 2006/0121364 (2006-06-01), Omura
patent: 2007/0003879 (2007-01-01), Chang et al.
patent: 2009/0061328 (2009-03-01), Nonami et al.
patent: 2009/0061330 (2009-03-01), Irie et al.
patent: 09-281690 (1997-10-01), None
patent: 2001-296647 (2001-10-01), None
patent: 2003-322949 (2003-11-01), None
United States Office Action, issued in U.S. Appl. No. 12/200,478, mailed Jun. 15, 2010.
United States Office Action, issued in U.S. Appl. No. 12/204,252, mailed Jun. 23, 2010.
United States Office Action issued in U.S. Appl. No. 12/200,478, mailed Nov. 15, 2010.
United States Notice of Allowance issued in U.S. Appl. No. 12/204,252, mailed Nov. 17, 2010.

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