Photomask and method of structuring a photoresist by double...

Details Photomask and method of structuring a photoresist by double... Photomask and method of structuring a photoresist by double...

2006-03-14

2006-03-14

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C430S311000

Reexamination Certificate

active

07011936

ABSTRACT:
A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5821014 (1998-10-01), Chen et al.
patent: 6514648 (2003-02-01), Peng

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