Photomask and method of fabricating semiconductor device by...

Details Photomask and method of fabricating semiconductor device by... Photomask and method of fabricating semiconductor device by...

2006-07-11

2006-07-11

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S005000, C430S396000

Reexamination Certificate

active

07074547

ABSTRACT:
A photomask for use in a semiconductor fabrication process, comprises a plurality of first mask patterns for transferring resist patterns, and second mask patterns for restraining an optical proximity effect, each having a width not larger than a resolution limit. The second mask patterns are formed in a line-like shape, and disposed so as to link together the plurality of the first mask patterns. As a result of use of the second mask patterns in the line-like shape, a fewer parameters may be added in simulation of resist patterns. Thus, it becomes possible to provide the photomask for efficiently performing simulation and forming suitable resist patterns. Further, the photomask can be used in a semiconductor fabrication process.

REFERENCES:
patent: 5725973 (1998-03-01), Han et al.
patent: 6114071 (2000-09-01), Chen et al.
patent: 6284415 (2001-09-01), Nakasuji
patent: 6383691 (2002-05-01), Seitz et al.
patent: 6465138 (2002-10-01), Stanton
patent: 2001/0028981 (2001-10-01), Okada et al.

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