Photolithography of chemically amplified resist utilizing 200.de

Details Photolithography of chemically amplified resist utilizing 200.de Photolithography of chemically amplified resist utilizing 200.de

1997-01-23

1998-08-04

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430330, 15665911, 427534, 427541, G03C 500

Patent

active

057891419

ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of heating a substrate at a temperature not less than 200.degree. C., for example 800.degree. C., for a sufficient period; cooling the substrate down to room temperature; coating a chemically amplified resist film on the surface of the substrate; exposing a patterning region of the resist film; developing the resist film to form a resist pattern; and etching the surface of the substrate by a certain thickness, employing the resist pattern as a mask. In forming fine resist pattern using chemically amplified resist, resolution can be improved.

REFERENCES:
patent: 4645683 (1987-02-01), Gourrier et al.
patent: 4871580 (1989-10-01), Schram et al.

Affiliated with

Also associated with

Rating

Photolithography of chemically amplified resist utilizing 200.de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photolithography of chemically amplified resist utilizing 200.de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photolithography of chemically amplified resist utilizing 200.de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1175466