Photolithography masks including phase-shifting layers and relat

Details Photolithography masks including phase-shifting layers and relat Photolithography masks including phase-shifting layers and relat

1996-10-31

1998-09-08

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058043381

ABSTRACT:
A phase-shifting mask is provided for irradiating a microelectronic wafer having first and second wafer regions wherein the first wafer region has a large step difference relative to the second wafer region. The phase-shifting mask includes a substrate which transmits light therethrough and a patterned layer of a phase shifting material which shifts a phase of light transmitted by the substrate. The phase-shifting mask also includes a layer which controls the transmissivity of light through the phase-shifting mask so that a transmissivity of light through a first mask region is small relative to a transmissivity of light through a second mask region wherein the first mask region corresponds to the first wafer region and the second mask region corresponds to the second wafer region. Related masks and structures are also discussed.

REFERENCES:
patent: 5536602 (1996-07-01), Nakao
patent: 5660956 (1997-08-01), Tomofuji et al.
Naoyuki Ishiwata et al., Fabrication of Phase-Shifting Mask, SPIE, vol. 1463, Optical/Laser Microlithography IV(Jan. 1991), pp. 423-433.
Marc D. Levenson et al., Improving Resolution In Photolithography With A Phase-Shifting Mask, IEEE Transactions On Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.

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