Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2009-06-08
2011-11-01
Huff, Mark F (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
08048590
ABSTRACT:
A photolithography mask includes a design feature located in an isolated or semi-isolated region of the mask and a plurality of parallel linear assist features disposed substantially perpendicular to the design feature. The plurality of parallel linear assist features may include a first series of parallel assist features disposed on a first side of the design feature and perpendicularly thereto, and a second series of parallel assist features disposed on a second side of the design feature and perpendicularly thereto.
REFERENCES:
patent: 5821014 (1998-10-01), Chen et al.
patent: 6413683 (2002-07-01), Liebmann et al.
patent: 6492097 (2002-12-01), Chen et al.
patent: 6519760 (2003-02-01), Shi et al.
patent: 6745380 (2004-06-01), Bodendorf et al.
patent: 6787272 (2004-09-01), Yu
patent: 6818480 (2004-11-01), Lee et al.
patent: 6841801 (2005-01-01), Kim et al.
patent: 7087350 (2006-08-01), Wang
patent: 2002/0192570 (2002-12-01), Smith
patent: 2005/0026047 (2005-02-01), Yang
patent: 2005/0205961 (2005-09-01), Doong
Chen Kuei Shun
Lai Chien-Wen
Tsay Cherng-Shyan
Yen Yung-Sung
Haynes and Boone LLP
Huff Mark F
Ruggles John S
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Photolithography mask having a scattering bar structure that... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photolithography mask having a scattering bar structure that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photolithography mask having a scattering bar structure that... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4283406