Photolithographic processes using thin coatings of refractory me

Details Photolithographic processes using thin coatings of refractory me Photolithographic processes using thin coatings of refractory me

1990-08-06

1991-11-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 148DIG137, 430275, 430276, 430311, 430313, H01L 2100, H01L 2102, H01L 2188

Patent

active

050666150

ABSTRACT:
An antireflection coating (21) for use in integrated circuit processing consists of a film of x-silicon-nitride, where x is a metal from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten. These coatings are preferably made by sputtering, with the x silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.

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"Antireflection Coatings on Metal Layers for Photolithographic Purposes", by H. A. M. van den Berg et al., Journal of Applied Physics, vol. 50, No. 3, Mar. 1979, pp. 1212-1214.
"Sputtered Metallizations for Hybrid Devices", by R. P. Maniscalco et al., Hybrid Circuit Technology, Sep. 1984, pp. 19-23.
"Reactive Sputter Deposition: A Quantitative Analysis", by D. K. Hohne et al., Thin Solid Films, Elsevier Sequoia, vol. 118 (1984), pp. 301-310.
Nakamura, A., Films Resists, Chemical Abstracts, CA104(10):73434v, 1985.

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