Photoionization technique for growth of metallic films

Details Photoionization technique for growth of metallic films Photoionization technique for growth of metallic films

1985-05-29

1987-03-10

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 531, 427 541, 427 86, 118 501, 118723, B05D 306

Patent

active

046490590

ABSTRACT:
A novel method and system for depositing films of selected metallic or semiconductor materials, and particularly of the group III, IV, and V elements, is described which comprises heating a halide compound of the material to produce vapor within a substantially closed chamber, irradiating the vapor with light of preselected wavelength to dissociatively photoionize the vapor into the constituent positive ions of the material and negative halogen ions, and subjecting the photoionized vapor to an electric field to selectively remove the positive ions of the material for plating as a film.

REFERENCES:
patent: 4260649 (1981-04-01), Dension et al.
patent: 4324854 (1982-04-01), Beauchamp et al.
patent: 4335160 (1982-06-01), Neary et al.
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4359485 (1982-11-01), Donnelly et al.
patent: 4412899 (1983-11-01), Beale

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