Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S249000
Reexamination Certificate
active
10117281
ABSTRACT:
A photogate-based photosensor for use in a CMOS imager exhibiting improved short wavelength light response. The photogate is formed of a thin conductive layer about 50 to 3000 Angstroms thick. The conductive layer may be a silicon layer, a layer of indium and/or tin oxide, or may be a stack having an indium and/or tin oxide layer over a silicon layer. The thin conductive layer of the photogate permits a greater amount of short wavelength light to pass through the photogate to reach the photosite in the substrate, and thereby increases the quantum efficiency of the photosensor for short wavelengths of light.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Micro)n Technology, Inc.
Munson Gene M.
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