Photoetching method

Details Photoetching method Photoetching method

1980-06-09

1982-03-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29580, 156646, 156656, 156657, 1566591, 357 67, 427 88, 430313, 430315, 430318, H01L 21306, C23F 102

Patent

active

043211046

ABSTRACT:
In forming an interconnection pattern on a silicon substrate, an Al-Si alloy is used as an interconnection material, a silicon film is deposited on the Al-Si alloy film, and a photoresist layer is applied and thereafter exposed to light to provide a photoresist pattern to serve as a mask for subsequent etching of the Al-Si alloy film.
Thus, the generation of standing waves due to reflection at the exposure is prevented, a microscopic interconnection pattern is precisely formed, and neither the junction-through due to a heat treatment nor a degradation in the bonding characteristics occurs.

REFERENCES:
patent: 3609470 (1971-09-01), Kuiper
patent: 3881971 (1975-05-01), Greer et al.
patent: 4062720 (1977-12-01), Alcorn et al.

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