Photoelectron-induced selective etch process

Details Photoelectron-induced selective etch process Photoelectron-induced selective etch process

1991-04-30

1992-07-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 156657, 1566591, 156662, 156668, 21912169, 21912184, H01L 21306, B44C 122, C23F 102, B29C 3700

Patent

active

051299917

ABSTRACT:
The relative photoemission threshold properties of conductive materials are used as a basis for selectively etching conductive materials in the presence of other conductive materials. An irradiation beam of pre-selected wavelength is used to generate photoemitted electrons locally which in turn create reactive etch fragments in localized regions adjacent to the electron source. These localized fragments react with the material to be etched to form volatile reaction products which are removed from the chamber in which these reactions take place. Various configurations for the treatment of conductive materials are described. In one embodiment, the irradiation beam is impinged upon the substrate at an incident angle to create non-orthogonal surfaces.

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