Photoelectrochemical undercut etching of semiconductor material

Details Photoelectrochemical undercut etching of semiconductor material Photoelectrochemical undercut etching of semiconductor material

2005-04-26

2005-04-26

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Quantum dots and lines

C216S103000

Reexamination Certificate

active

06884740

ABSTRACT:
Photoelectrochemical (PEC) etching is restricted to a group III nitride semiconductor-barrier interface to laterally etch or undercut the target group III nitride. The barrier interface is provided by the transparent sapphire substrate on which the target group III nitride is epitaxially grown or by a layer of material in intimate contact with the target group III nitride material and having a bandgap sufficiently high to make it resistant to PEC etching. Due to the first orientation in which this effect was first observed, it has been named backside-Illuminated photoelectrochemical (BIPEC) etching. It refers to a preferential etching at the semiconductor-barrier layer interface. The assembly can be exposed to light from any direction to effectuate bandgap-selective PEC etching. An opaque mask can be applied to limit the lateral extent of the photoelectrochemical etching.

REFERENCES:
patent: 5279702 (1994-01-01), Douglas
patent: 5460687 (1995-10-01), Douglas
patent: 5773369 (1998-06-01), Hu et al.
patent: 5895223 (1999-04-01), Peng et al.
patent: 6245687 (2001-06-01), Barsky et al.
patent: 6445009 (2002-09-01), Grandjean et al.
patent: 6468902 (2002-10-01), Kawai
R. P. Strittmatter et al, Fabrication of FaN Suspended Microstructures, Applied physics Letters, vol. 78 No. 21, May 21, 2001.

Affiliated with

Also associated with

Rating

Photoelectrochemical undercut etching of semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoelectrochemical undercut etching of semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoelectrochemical undercut etching of semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3372107