Photoelectric semiconductor device having a GaAsP substrate

Details Photoelectric semiconductor device having a GaAsP substrate Photoelectric semiconductor device having a GaAsP substrate

1998-09-01

1999-12-28

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 98, 257103, 257190, 372 45, 372 46, H01L 3300, H01L 310328

Patent

active

06008507&

ABSTRACT:
A structure of a semiconductor light emitting device includes a GaAs substrate, a GaAsP interface substrate, a first cladding layer, an active layer, and a second cladding layer. The GaAsP interface substrate layer is formed on the GaAs substrate, in addition, the GaAsP interface substrate layer formed on the substrate is of a thickness such that the upper surface of the GaAsP interface substrate layer adjacent to the substrate is composed of single crystal. The first cladding layer of a first conductivity is formed on the GaAsP interface substrate layer. The active layer is formed on the first cladding layer, from which the light is generated in the active layer. The second cladding layer of a second conductivity is formed on the active layer.

REFERENCES:
patent: 5153889 (1992-10-01), Sugawara et al.

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